Semiconductors, Transistors, Transistors - JFETs IDSS(MAX) 10 mA
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- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-XFDFN
- Supplier Device Package: ECSP1006-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 200mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK170A
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK389
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-71-6 Metal Can
- Supplier Device Package: TO-71
- FET Type: 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
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- Manufacturer: Linear Integrated Systems, Inc.
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 6V @ 1µA
- Resistance - RDS(On): 38 Ohms
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- Manufacturer: Microchip Technology
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
- FET Type: P-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 5V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 750mV @ 1A
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK189
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
- Power - Max: 300mW
- Voltage - Breakdown (V(BR)GSS): 60 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5mA @ 15V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1nA
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- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 250mW
- Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-USFP
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 30mW
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: LSK170B
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 135°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
- Power - Max: 400mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 6mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 3-XFDFN
- Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Voltage - Breakdown (V(BR)GSS): 30V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
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- Manufacturer: Panasonic Electronic Components
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
- FET Type: N-Channel
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
- Power - Max: 200mW
- Current - Drain (Idss) @ Vds (Vgs=0): 1.4µA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 3.5V @ 1µA
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Power - Max: 100mW
- Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
- Resistance - RDS(On): 200 Ohms
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- Manufacturer: Linear Integrated Systems, Inc.
- Series: J201
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
- Power - Max: 350mW
- Voltage - Breakdown (V(BR)GSS): 40V
- Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
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