• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 86
  • APT100GF60JU2
    IGBT MOD 600V 120A 416W SOT227
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: ISOTOP
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
    • NTC Thermistor: Yes
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  • APTGF90H60T3G
    IGBT MODULE 600V 120A 416W SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Full Bridge Inverter
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
    • NTC Thermistor: Yes
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  • FGA120N30DTU
    IGBT, 120A, 300V, N-CHANNEL
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Reverse Recovery Time (trr): 21ns
    • Power - Max: 290W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 300A
    • Gate Charge: 120nC
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  • STGW80V60F
    IGBT 600V 120A 469W TO247
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 469W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 80A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
    • Current - Collector Pulsed (Icm): 240A
    • Switching Energy: 1.8mJ (on), 1mJ (off)
    • Gate Charge: 448nC
    • Td (on/off) @ 25°C: 60ns/220ns
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  • FGA60N65SMD
    IGBT FIELD STOP 650V 120A TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Reverse Recovery Time (trr): 47ns
    • Power - Max: 600W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 3Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 1.54mJ (on), 450µJ (off)
    • Gate Charge: 189nC
    • Td (on/off) @ 25°C: 18ns/104ns
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  • FGPF120N30TU
    N-CHANNEL IGBT
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 180A
    • Gate Charge: 112nC
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  • APTGT75A170D1G
    IGBT MODULE 1700V 120A 520W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Half Bridge
    • Power - Max: 520W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
    • NTC Thermistor: No
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  • FGA120N30DTU
    IGBT 300V 120A 290W TO3P
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Reverse Recovery Time (trr): 21ns
    • Power - Max: 290W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
    • Current - Collector Pulsed (Icm): 300A
    • Gate Charge: 120nC
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  • APT100GF60JU3
    IGBT MOD 600V 120A 416W SOT227
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: ISOTOP
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 416W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 100µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
    • NTC Thermistor: No
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  • FGH60T65SHD-F155
    IGBT TRENCH/FS 650V 120A TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 34.6ns
    • Power - Max: 349W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 60A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 1.69mJ (on), 630µJ (off)
    • Gate Charge: 102nC
    • Td (on/off) @ 25°C: 26ns/87ns
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  • IXGQ120N30TCD1
    IGBT 300V 120A TO3P
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3P
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • IGBT Type: Trench
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  • GPA060A060MN-FD
    IGBT 600V 120A 347W TO3PN
    SemiQ
    • Manufacturer: SemiQ
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 140ns
    • Power - Max: 347W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 60A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
    • Current - Collector Pulsed (Icm): 180A
    • Switching Energy: 2.66mJ (on), 1.53mJ (off)
    • Gate Charge: 225nC
    • Td (on/off) @ 25°C: 45ns/150ns
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  • GHIS060A120S-A2
    IGBT MOD 1200V 120A 680W SOT227
    SemiQ
    • Manufacturer: SemiQ
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Power - Max: 680W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 2mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
    • Input Capacitance (Cies) @ Vce: 8nF @ 30V
    • NTC Thermistor: No
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  • APTGT75SK170D1G
    IGBT MODULE 1700V 120A 520W D1
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: D1
    • Supplier Device Package: D1
    • Configuration: Single
    • Power - Max: 520W
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Current - Collector Cutoff (Max): 5mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
    • NTC Thermistor: No
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  • AFGY100T65SPD
    IGBT - 650 V 100 A FS3 FOR EV TR
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 105ns
    • Power - Max: 660W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 120A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 100A, 5Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 5.1mJ (on), 2.7mJ (off)
    • Gate Charge: 109nC
    • Td (on/off) @ 25°C: 36ns/78ns
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