• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
Found: 47
  • IGBT 600V 11A 28W TO220FP
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220FP
    • Reverse Recovery Time (trr): 37ns
    • Power - Max: 28W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 390V, 7A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
    • Current - Collector Pulsed (Icm): 50A
    • Switching Energy: 82µJ (on), 155µJ (off)
    • Gate Charge: 34.4nC
    • Td (on/off) @ 25°C: 22.5ns/116ns
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  • IGBT WITH RECOVERY DIODE
    International Rectifier
    • Manufacturer: International Rectifier
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • Reverse Recovery Time (trr): 48ns
    • Power - Max: 58W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 12A
    • Switching Energy: 140µJ (on), 62µJ (off)
    • Gate Charge: 9nC
    • Td (on/off) @ 25°C: 27ns/120ns
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  • IGBT 600V 11A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Reverse Recovery Time (trr): 48ns
    • Power - Max: 58W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 12A
    • Switching Energy: 140µJ (on), 62µJ (off)
    • Gate Charge: 9nC
    • Td (on/off) @ 25°C: 27ns/120ns
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  • IGBT 1200V 11A 60W TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AC
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 5A, 50Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 450µJ (on), 440µJ (off)
    • Gate Charge: 28nC
    • Td (on/off) @ 25°C: 23ns/93ns
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  • IGBT 600V 11A 33W TO220ABFP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220AB Full-Pak
    • Reverse Recovery Time (trr): 73ns
    • Power - Max: 33W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 6A, 47Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
    • Current - Collector Pulsed (Icm): 18A
    • Switching Energy: 64µJ (on), 123µJ (off)
    • Gate Charge: 13nC
    • Td (on/off) @ 25°C: 26ns/73ns
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  • IGBT MOD 600V 11A 40.5W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Full Bridge
    • Power - Max: 40.5W
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
    • Input Capacitance (Cies) @ Vce: 330pF @ 25V
    • NTC Thermistor: Yes
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  • IGBT 600V 11A 58W DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3
    • Reverse Recovery Time (trr): 48ns
    • Power - Max: 58W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 1.5A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 12A
    • Switching Energy: 140µJ (on), 62µJ (off)
    • Gate Charge: 9nC
    • Td (on/off) @ 25°C: 27ns/120ns
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  • IGBT 1200V 11A 60W TO247AC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AC
    • Reverse Recovery Time (trr): 51ns
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 800V, 5A, 50Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 620µJ (on), 300µJ (off)
    • Gate Charge: 28nC
    • Td (on/off) @ 25°C: 50ns/100ns
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  • IGBT MODULE 600V 11A 36W IMS-2
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 19-SIP (13 Leads), IMS-2
    • Supplier Device Package: IMS-2
    • Power - Max: 36W
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
    • Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
    • NTC Thermistor: No
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  • IGBT 600V 11A 58W TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Reverse Recovery Time (trr): 48ns
    • Power - Max: 58W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 12A
    • Switching Energy: 140µJ (on), 62µJ (off)
    • Gate Charge: 9nC
    • Td (on/off) @ 25°C: 27ns/120ns
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  • IGBT 1200V 11A 60W D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 5A, 50Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 450µJ (on), 440µJ (off)
    • Gate Charge: 28nC
    • Td (on/off) @ 25°C: 23ns/93ns
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  • IRGB4B60K - IGBT WITH ULTRAFAST
    International Rectifier
    • Manufacturer: International Rectifier
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Reverse Recovery Time (trr): 93ns
    • Power - Max: 63W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 73µJ (on), 47µJ (off)
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: 22ns/100ns
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  • IGBT WITH RECOVERY DIODE
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • Reverse Recovery Time (trr): 48ns
    • Power - Max: 58W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 12A
    • Switching Energy: 140µJ (on), 62µJ (off)
    • Gate Charge: 9nC
    • Td (on/off) @ 25°C: 27ns/120ns
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  • IRGSL4B60 - DISCRETE IGBT WITH A
    International Rectifier
    • Manufacturer: International Rectifier
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • Reverse Recovery Time (trr): 93ns
    • Power - Max: 63W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 73µJ (on), 47µJ (off)
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: 22ns/100ns
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  • IGBT NPT 600V 11A TO262
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: TO-262
    • Reverse Recovery Time (trr): 93ns
    • Power - Max: 63W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 11A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 4A, 100Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
    • Current - Collector Pulsed (Icm): 22A
    • Switching Energy: 73µJ (on), 47µJ (off)
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: 22ns/100ns
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