- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Input Type
- IGBT Type
- Current - Collector Cutoff (Max)
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Test Condition
- Current - Collector Pulsed (Icm)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Configuration
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
IGBT Type
|
Current - Collector Cutoff (Max)
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Test Condition
|
Current - Collector Pulsed (Icm)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRGS4055PBF | IGBT 300V 110A 255W D2PAK | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 110A | 300V | 255W | Surface Mount | -40°C ~ 150°C (TJ) | D2PAK | Standard | Trench | 2.1V @ 15V, 110A | 180V, 35A, 10Ohm | 132nC | 44ns/245ns | |||||||||
| IXBX75N170A | IGBT 1700V 110A 1040W PLUS247 | IXYS | TO-247-3 Variant | 110A | 1700V | 1040W | Through Hole | -55°C ~ 150°C (TJ) | PLUS247™-3 | Standard | 6V @ 15V, 42A | 1360V, 42A, 1Ohm, 15V | 300A | 360ns | 3.8mJ (off) | 358nC | 26ns/418ns | BIMOSFET™ | ||||||
| IXXH40N65C4D1 | DISC IGBT XPT-GENX4 TO-247AD | IXYS | TO-247-3 | 110A | 650V | 455W | Through Hole | -55°C ~ 175°C (TJ) | TO-247 (IXTH) | Standard | PT | 2.3V @ 15V, 40A | 400V, 40A, 5Ohm, 15V | 215A | 62ns | 1.6mJ (on), 420µJ (off) | 68nC | 20ns/100ns | XPT™, GenX4™ | |||||
| IXSN55N120A | IGBT MOD 1200V 110A 500W SOT227B | IXYS | SOT-227-4, miniBLOC | 110A | 1200V | 500W | Chassis Mount | Single | -55°C ~ 150°C (TJ) | SOT-227B | 1mA | 4V @ 15V, 55A | 8nF @ 25V | Standard | No | |||||||||
| MWI75-12T7T | IGBT MODULE 1200V 110A 355W E2 | IXYS | E2 | 110A | 1200V | 355W | Chassis Mount | Three Phase Inverter | -40°C ~ 125°C (TJ) | E2 | Trench | 4mA | 2.15V @ 15V, 75A | 5.35nF @ 25V | Standard | Yes | ||||||||
| APTGT75SK120TG | IGBT MODULE 1200V 110A 357W SP4 | Microchip Technology | SP4 | 110A | 1200V | 357W | Chassis Mount | Single | -40°C ~ 150°C (TJ) | SP4 | Trench Field Stop | 250µA | 2.1V @ 15V, 75A | 5.34nF @ 25V | Standard | Yes | ||||||||
| APT50GT60BRG | IGBT 600V 110A 446W TO247 | Microchip Technology | TO-247-3 | 110A | 600V | 446W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | NPT | 2.5V @ 15V, 50A | 400V, 50A, 4.3Ohm, 15V | 150A | 995µJ (on), 1070µJ (off) | 240nC | 14ns/240ns | Thunderbolt IGBT® | ||||||
| APTGL90H120T3G | IGBT MODULE 1200V 110A 385W SP3 | Microchip Technology | SP3 | 110A | 1200V | 385W | Chassis Mount | Full Bridge | -40°C ~ 175°C (TJ) | SP3 | Trench Field Stop | 250µA | 2.25V @ 15V, 75A | 4.4nF @ 25V | Standard | Yes | ||||||||
| MSCGLQ50DH120CTBL2NG | PM-IGBT-SBD-BL2 | Microchip Technology | Module | 110A | 1200V | 375W | Chassis Mount | Asymmetrical Bridge | -55°C ~ 175°C (TJ) | 25µA | 2.4V @ 15V, 50A | 2.77nF @ 25V | Standard | Yes | ||||||||||
| APTGF90DA60CT1G | IGBT MODULE 600V 110A 416W SP1 | Microsemi Corporation | SP1 | 110A | 600V | 416W | Chassis Mount | Single | SP1 | NPT | 250µA | 2.5V @ 15V, 100A | 4.3nF @ 25V | Standard | Yes | |||||||||
| APT50GT60BRDQ2G | IGBT 600V 110A 446W TO247 | Microsemi Corporation | TO-247-3 | 110A | 600V | 446W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 [B] | Standard | NPT | 2.5V @ 15V, 50A | 400V, 50A, 5Ohm, 15V | 150A | 22ns | 995µJ (on), 1070µJ (off) | 240nC | 14ns/240ns | Thunderbolt IGBT® | |||||
| APTGL90DA120T1G | IGBT MODULE 1200V 110A 385W SP1 | Microsemi Corporation | SP1 | 110A | 1200V | 385W | Chassis Mount | Single | -40°C ~ 175°C (TJ) | SP1 | Trench Field Stop | 250µA | 2.25V @ 15V, 75A | 4.4nF @ 25V | Standard | Yes | ||||||||
| APTGT75DH120T3G | IGBT MODULE 1200V 110A 357W SP3 | Microsemi Corporation | SP3 | 110A | 1200V | 357W | Chassis Mount | Asymmetrical Bridge | -40°C ~ 150°C (TJ) | SP3 | Trench Field Stop | 250µA | 2.1V @ 15V, 75A | 5.34nF @ 25V | Standard | Yes | ||||||||
| APTGT75H120TG | IGBT MODULE 1200V 110A 357W SP4 | Microsemi Corporation | SP4 | 110A | 1200V | 357W | Chassis Mount | Full Bridge Inverter | -40°C ~ 150°C (TJ) | SP4 | Trench Field Stop | 250µA | 2.1V @ 15V, 75A | 5.34nF @ 25V | Standard | Yes | ||||||||
| STGW50HF60SD | IGBT 600V 110A 284W TO247 | STMicroelectronics | TO-247-3 | 110A | 600V | 284W | Through Hole | -55°C ~ 150°C (TJ) | TO-247-3 | Standard | 1.45V @ 15V, 30A | 400V, 30A, 10Ohm, 15V | 130A | 67ns | 250µJ (on), 4.2mJ (off) | 200nC | 50ns/220ns |
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