• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 94
  • ISL9V2040S3ST
    INSULATED GATE BIPOLAR TRANSISTO
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Series: EcoSPARK®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK (TO-263)
    • Power - Max: 130W
    • Input Type: Logic
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 430V
    • Test Condition: 300V, 1kOhm, 5V
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: -/3.64µs
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  • STGP3NB60K
    IGBT 600V 10A 50W TO220
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Power - Max: 50W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 480V, 3A, 10Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
    • Current - Collector Pulsed (Icm): 24A
    • Switching Energy: 58µJ (off)
    • Gate Charge: 14nC
    • Td (on/off) @ 25°C: 14ns/33ns
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  • RJH60A01RDPD-A0#J2
    IGBT 600V 5A
    Renesas Electronics America
    • Manufacturer: Renesas Electronics America
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252
    • Reverse Recovery Time (trr): 100ns
    • Power - Max: 29.4W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 5A, 5Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A
    • Switching Energy: 130µJ (on), 70µJ (off)
    • Gate Charge: 11nC
    • Td (on/off) @ 25°C: 30ns/40ns
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  • AOD5B65MQ1E
    IGBT 5A 650V TO252
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: AlphaIGBT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252 (DPAK)
    • Reverse Recovery Time (trr): 74ns
    • Power - Max: 52W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 5A, 60Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 15A
    • Switching Energy: 90µJ (on), 60µJ (off)
    • Gate Charge: 8.8 nC
    • Td (on/off) @ 25°C: 7ns/78ns
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  • SIGC11T60SNCX1SA2
    IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 10A, 25Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 30A
    • Td (on/off) @ 25°C: 28ns/198ns
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  • STGD5NB120SZT4
    IGBT 1200V 10A 75W DPAK
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Series: PowerMESH™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: DPAK
    • Power - Max: 75W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 960V, 5A, 1kOhm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 10A
    • Switching Energy: 2.59mJ (on), 9mJ (off)
    • Td (on/off) @ 25°C: 690ns/12.1µs
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  • ISL9V2040D3STV
    IGBT, 430V, 10A, 1.95V, 200MJ, D
    onsemi
    • Manufacturer: onsemi
    • Series: EcoSPARK®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-252AA
    • Power - Max: 130W
    • Input Type: Logic
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 430V
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: 610ns/3.64µs
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  • AOB5B65M1
    IGBT 650V 5A TO263
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: Alpha IGBT™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263 (D2Pak)
    • Reverse Recovery Time (trr): 195ns
    • Power - Max: 83W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 5A, 60Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 15A
    • Switching Energy: 80µJ (on), 70µJ (off)
    • Gate Charge: 14nC
    • Td (on/off) @ 25°C: 8.5ns/106ns
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  • IXGT10N170A
    IGBT 1700V 10A 140W TO268
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
    • Supplier Device Package: TO-268AA
    • Power - Max: 140W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Test Condition: 850V, 10A, 22Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 380µJ (off)
    • Gate Charge: 29nC
    • Td (on/off) @ 25°C: 46ns/190ns
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  • ISL9V2040S3S
    N-CHANNEL IGBT
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Series: EcoSPARK®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263AB
    • Power - Max: 130W
    • Input Type: Logic
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 430V
    • Test Condition: 300V, 1kOhm, 5V
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
    • Gate Charge: 12nC
    • Td (on/off) @ 25°C: -/3.64µs
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  • SGS5N150UFTU
    IGBT, 10A, 1500V, N-CHANNEL
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220F-3
    • Power - Max: 50W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 1500V
    • Test Condition: 600V, 5A, 10Ohm, 10V
    • Vce(on) (Max) @ Vge, Ic: 5.5V @ 10V, 5A
    • Current - Collector Pulsed (Icm): 20A
    • Switching Energy: 190µJ (on), 100µJ (off)
    • Gate Charge: 30nC
    • Td (on/off) @ 25°C: 10ns/30ns
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  • GT10J312(Q)
    IGBT 600V 10A 60W TO220SM
    Toshiba Semiconductor and Storage
    • Manufacturer: Toshiba Semiconductor and Storage
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: TO-220SM
    • Reverse Recovery Time (trr): 200ns
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 10A, 100Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
    • Current - Collector Pulsed (Icm): 20A
    • Td (on/off) @ 25°C: 400ns/400ns
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  • HGTP10N40E1
    10A, 400V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
    • Current - Collector Pulsed (Icm): 17.5 A
    • Gate Charge: 19nC
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  • AOT5B65M1
    IGBT 650V 5A TO220
    Alpha & Omega Semiconductor Inc.
    • Manufacturer: Alpha & Omega Semiconductor Inc.
    • Series: Alpha IGBT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • Reverse Recovery Time (trr): 195ns
    • Power - Max: 83W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 5A, 60Ohm, 15V
    • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
    • Current - Collector Pulsed (Icm): 15A
    • Switching Energy: 80µJ (on), 70µJ (off)
    • Gate Charge: 14nC
    • Td (on/off) @ 25°C: 8.5ns/106ns
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  • HGTP10N40C1
    10A, 400V, N-CHANNEL IGBT
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220-3
    • Power - Max: 60W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 10A
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
    • Current - Collector Pulsed (Icm): 17.5 A
    • Gate Charge: 19nC
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