• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
Found: 318
  • IGBT TRENCH/FS 650V 100A TO3PN
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-3P-3, SC-65-3
    • Supplier Device Package: TO-3PN
    • Reverse Recovery Time (trr): 34.6ns
    • Power - Max: 319W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 6Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 1.28mJ (on), 384µJ (off)
    • Gate Charge: 87nC
    • Td (on/off) @ 25°C: 22.4ns/73.6ns
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  • IGBT 650V A
    onsemi
    • Manufacturer: onsemi
    • Series: Automotive, AEC-Q101
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Power - Max: 238W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 12.5A, 4.7Ohm, 15V
    • IGBT Type: Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 131µJ (on), 96µJ (off)
    • Gate Charge: 94nC
    • Td (on/off) @ 25°C: 17.6ns/94.4ns
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  • IGBT MODULE 600V 100A 250W SP6P
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • Configuration: Three Phase
    • Power - Max: 250W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
    • NTC Thermistor: No
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  • IGBT 600V 100A 463W TMAX
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: T-MAX™
    • Power - Max: 463W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 30A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
    • Current - Collector Pulsed (Icm): 120A
    • Switching Energy: 260µJ (on), 250µJ (off)
    • Gate Charge: 90nC
    • Td (on/off) @ 25°C: 13ns/55ns
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  • IGBT, 100A, 600V, N-CHANNEL
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 7PM-GA
    • Supplier Device Package: 7PM-GA
    • Configuration: Single
    • Power - Max: 400W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 10.84nF @ 30V
    • NTC Thermistor: No
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  • IGBT MOD 1200V 100A 350W SOT227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis, Stud Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • Configuration: Single
    • Power - Max: 350W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 100µA
    • Input: Standard
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • NTC Thermistor: No
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  • IGBT 600V 100A 333W TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: TrenchStop™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-1
    • Power - Max: 333W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 7Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 150A
    • Switching Energy: 2.6mJ
    • Gate Charge: 310nC
    • Td (on/off) @ 25°C: 26ns/299ns
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  • IGBT 3 CHIP 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 300V, 100A, 2.2Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
    • Current - Collector Pulsed (Icm): 300A
    • Td (on/off) @ 25°C: 95ns/200ns
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  • IGBT MOD 600V 100A POWIR ECO 2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: POWIR ECO 2™ Module
    • Supplier Device Package: POWIR ECO 2™
    • Configuration: Three Phase Inverter
    • Power - Max: 245W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
    • Input Capacitance (Cies) @ Vce: 3nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MOD 1200V 100A 445W SOT227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • Configuration: Single
    • Power - Max: 445W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 800µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
    • Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
    • NTC Thermistor: No
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  • IGBT MODULE 1200V 100A 500W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Asymmetrical Bridge
    • Power - Max: 500W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.1nF @ 25V
    • NTC Thermistor: Yes
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  • IGBT MOD 1200V 100A 625W
    Powerex Inc.
    • Manufacturer: Powerex Inc.
    • Series: IGBTMOD™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter with Brake
    • Power - Max: 625W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 17.5nF @ 10V
    • NTC Thermistor: Yes
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  • IGBT 600V 50A TO247
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • Reverse Recovery Time (trr): 85ns
    • Power - Max: 223W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 1.1mJ (on), 600µJ (off)
    • Gate Charge: 310nC
    • Td (on/off) @ 25°C: 116ns/292ns
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  • IGBT MOD 600V 109A EMIPAK-2B
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: EMIPAK-2B
    • Supplier Device Package: EMIPAK-2B
    • Configuration: Three Level Inverter
    • Power - Max: 294W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 100µA
    • Input: Standard
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.44nF @ 30V
    • NTC Thermistor: Yes
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  • IGBT MODULE 1200V 100A SOT227
    GeneSiC Semiconductor
    • Manufacturer: GeneSiC Semiconductor
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4
    • Supplier Device Package: SOT-227
    • Configuration: Single
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 8.55nF @ 25V
    • NTC Thermistor: No
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