• Current - Collector (Ic) (Max)
  • Voltage - Collector Emitter Breakdown (Max)
  • Power - Max
    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 318
  • CM100TF-24H
    IGBT MOD 1200V 100A 780W
    Powerex Inc.
    • Manufacturer: Powerex Inc.
    • Series: IGBTMOD™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 780W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 20nF @ 10V
    • NTC Thermistor: No
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  • RJH65T14DPQ-A0#T0
    IGBT TRENCH 650V 100A TO247A
    Renesas Electronics America Inc
    • Manufacturer: Renesas Electronics America Inc
    • Mounting Type: Through Hole
    • Operating Temperature: 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247A
    • Reverse Recovery Time (trr): 250ns
    • Power - Max: 250W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Test Condition: 400V, 50A, 10Ohm, 15V
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
    • Switching Energy: 1.3mJ (on), 1.2mJ (off)
    • Gate Charge: 80nC
    • Td (on/off) @ 25°C: 38ns/125ns
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  • APTCV60TLM45T3G
    IGBT MODULE 600V 100A 250W SP3
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SP3
    • Supplier Device Package: SP3
    • Configuration: Three Level Inverter - IGBT, FET
    • Power - Max: 250W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
    • NTC Thermistor: Yes
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  • APT80GP60B2G
    IGBT 600V 100A 1041W TMAX
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3 Variant
    • Supplier Device Package: T-MAX™ [B2]
    • Power - Max: 1041W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
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  • APT40GP60BG
    IGBT 600V 100A 543W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 400V, 40A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
    • Current - Collector Pulsed (Icm): 160A
    • Switching Energy: 385µJ (on), 352µJ (off)
    • Gate Charge: 135nC
    • Td (on/off) @ 25°C: 20ns/64ns
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  • APT75GP120B2G
    IGBT 1200V 100A 1042W TMAX
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3 Variant
    • Power - Max: 1042W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 75A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
    • Current - Collector Pulsed (Icm): 300A
    • Switching Energy: 1620µJ (on), 2500µJ (off)
    • Gate Charge: 320nC
    • Td (on/off) @ 25°C: 20ns/163ns
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  • IXXH50N60C3D1
    IGBT 600V 100A 600W TO247AD
    IXYS
    • Manufacturer: IXYS
    • Series: GenX3™, XPT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 (IXXH)
    • Reverse Recovery Time (trr): 25ns
    • Power - Max: 600W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Test Condition: 360V, 36A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 720µJ (on), 330µJ (off)
    • Gate Charge: 64nC
    • Td (on/off) @ 25°C: 24ns/62ns
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  • APT40GP90BG
    IGBT 900V 100A 543W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: POWER MOS 7®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247 [B]
    • Power - Max: 543W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 900V
    • Test Condition: 600V, 40A, 5Ohm, 15V
    • IGBT Type: PT
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
    • Current - Collector Pulsed (Icm): 160A
    • Switching Energy: 825µJ (off)
    • Gate Charge: 145nC
    • Td (on/off) @ 25°C: 16ns/75ns
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  • VS-70MT060WHTAPBF
    IGBT MODULE 600V 100A 347W MTP
    Vishay General Semiconductor - Diodes Division
    • Manufacturer: Vishay General Semiconductor - Diodes Division
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: 12-MTP Module
    • Supplier Device Package: MTP
    • Configuration: Half Bridge
    • Power - Max: 347W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 600V
    • Current - Collector Cutoff (Max): 700µA
    • Input: Standard
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 140A
    • Input Capacitance (Cies) @ Vce: 8nF @ 30V
    • NTC Thermistor: No
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  • APTGT75A120TG
    IGBT MODULE 1200V 100A 350W SP4
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP4
    • Supplier Device Package: SP4
    • Configuration: Half Bridge
    • Power - Max: 350W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 250µA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
    • NTC Thermistor: Yes
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  • STGYA50H120DF2
    TRENCH GATE FIELD-STOP, 1200 V,
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Reverse Recovery Time (trr): 340ns
    • Power - Max: 535W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 10Ohm, 15V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2mJ (on), 2.1mJ (off)
    • Gate Charge: 210nC
    • Td (on/off) @ 25°C: 40ns/284ns
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  • FS100R07N3E4_B11
    IGBT, 100A, 650V, N-CHANNEL
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 335W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
    • NTC Thermistor: Yes
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  • IGC54T65R3QEX1SA1
    IGBT CHIP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: TrenchStop™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 650V
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
    • Current - Collector Pulsed (Icm): 300A
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  • IFS100B12N3E4_B39
    IGBT MOD 1200V 100A 515W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 515W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: Trench Field Stop
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 6.3nF @ 25V
    • NTC Thermistor: Yes
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  • CM100TU-24F
    IGBT MOD 1200V 100A 500W
    Powerex Inc.
    • Manufacturer: Powerex Inc.
    • Series: IGBTMOD™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Three Phase Inverter
    • Power - Max: 500W
    • Current - Collector (Ic) (Max): 100A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 1mA
    • Input: Standard
    • IGBT Type: Trench
    • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
    • Input Capacitance (Cies) @ Vce: 39nF @ 10V
    • NTC Thermistor: No
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