Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single NI-780S 120W

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • MRF7S35120HSR5
    FET RF 65V 3.5GHZ NI-780S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-780S
    • Supplier Device Package: NI-780S
    • Frequency: 3.1GHz ~ 3.5GHz
    • Voltage - Rated: 65V
    • Current - Test: 150mA
    • Power - Output: 120W
    • Transistor Type: LDMOS
    • Gain: 12dB
    • Voltage - Test: 32V
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  • MRF7S35120HSR3
    FET RF 65V 3.5GHZ NI-780S
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: NI-780S
    • Supplier Device Package: NI-780S
    • Frequency: 3.1GHz ~ 3.5GHz
    • Voltage - Rated: 65V
    • Current - Test: 150mA
    • Power - Output: 120W
    • Transistor Type: LDMOS
    • Gain: 12dB
    • Voltage - Test: 32V
    Info from the market
    • Total warehouses:
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  • 10
  • 15
  • 50
  • 100