Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single NI-360 10W
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-360
- Supplier Device Package: NI-360
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 100mA
- Power - Output: 10W
- Transistor Type: LDMOS
- Gain: 13.5dB
- Voltage - Test: 28V
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-360
- Supplier Device Package: NI-360
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 100mA
- Power - Output: 10W
- Transistor Type: LDMOS
- Gain: 13.5dB
- Voltage - Test: 28V
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: Freescale Semiconductor
- Package / Case: NI-360
- Supplier Device Package: NI-360
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 100mA
- Power - Output: 10W
- Transistor Type: LDMOS
- Gain: 13.5dB
- Voltage - Test: 28V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100