-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230-4S GW
- Supplier Device Package: NI-1230-4S GULL
- Frequency: 1.03GHz
- Voltage - Rated: 112V
- Current - Test: 100mA
- Power - Output: 1000W
- Transistor Type: LDMOS (Dual)
- Gain: 19.6dB
- Voltage - Test: 50V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230-4S GW
- Supplier Device Package: NI-1230-4S GULL
- Frequency: 1.4GHz
- Voltage - Rated: 105V
- Current - Test: 100mA
- Power - Output: 1000W
- Transistor Type: LDMOS (Dual)
- Gain: 17.7dB
- Voltage - Test: 50V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230-4S GW
- Supplier Device Package: NI-1230-4S GULL
- Frequency: 960MHz ~ 1.22GHz
- Voltage - Rated: 112V
- Current - Test: 100mA
- Power - Output: 1000W
- Transistor Type: LDMOS (Dual)
- Gain: 19.6dB
- Voltage - Test: 50V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: NXP USA Inc.
- Package / Case: NI-1230-4S GW
- Supplier Device Package: NI-1230-4S GULL
- Frequency: 1.4GHz
- Voltage - Rated: 105V
- Current - Test: 100mA
- Power - Output: 1000W
- Transistor Type: LDMOS (Dual)
- Gain: 17.7dB
- Voltage - Test: 50V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100