• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 1
  • MHT1108NT1
    RF POWER LDMOS TRANSISTOR FOR CO
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Package / Case: 16-VDFN Exposed Pad
    • Supplier Device Package: 16-DFN (4x6)
    • Frequency: 2.45GHz
    • Voltage - Rated: 65V
    • Current - Test: 110mA
    • Power - Output: 12.5W
    • Transistor Type: LDMOS
    • Gain: 18.6dB
    • Voltage - Test: 32V
    • Current Rating (Amps): 10µA
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100