• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
BLP10H605Z RF FET LDMOS 104V 22DB 12VDFN Ampleon USA Inc. 12-HVSON (6x5) 5W 860MHz 104V 12-VDFN Exposed Pad LDMOS (Dual), Common Source 22.4dB 50V 30mA
BLP10H610AZ RF FET LDMOS 104V 22DB 12VDFN Ampleon USA Inc. 12-HVSON (6x5) 10W 860MHz 104V 12-VDFN Exposed Pad LDMOS (Dual), Common Source 22dB 50V 60mA
BLP10H603Z RF FET LDMOS 104V 22DB 12VDFN Ampleon USA Inc. 12-HVSON (6x5) 2.5W 860MHz 104V 12-VDFN Exposed Pad LDMOS 22.8dB 50V 15mA
BLP10H605AZ RF FET LDMOS 104V 22DB 12VDFN Ampleon USA Inc. 12-HVSON (6x5) 5W 860MHz 104V 12-VDFN Exposed Pad LDMOS (Dual), Common Source 22.4dB 50V 30mA
BLP10H610Z RF FET LDMOS 104V 22DB 12VDFN Ampleon USA Inc. 12-HVSON (6x5) 10W 860MHz 104V 12-VDFN Exposed Pad LDMOS (Dual), Common Source 22dB 50V 60mA
BLP7G22-10,135 TRANSISTOR DRIVER LDMOS 12HVSON NXP USA Inc. 12-HVSON (6x5) 2W 700MHz ~ 2.2GHz 65V 12-VDFN Exposed Pad LDMOS 27dB 28V 110mA
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