• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 10
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
SIE830DF-T1-E3 MOSFET N-CH 30V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 30V 50A (Tc) 4.2mOhm @ 16A, 10V 4.5V, 10V 2V @ 250µA 115nC @ 10V 5500pF @ 15V ±12V WFET®
SIE830DF-T1-GE3 MOSFET N-CH 30V 50A POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 30V 50A (Tc) 4.2mOhm @ 16A, 10V 4.5V, 10V 2V @ 250µA 115nC @ 10V 5500pF @ 15V ±12V WFET®
SIE820DF-T1-GE3 MOSFET N-CH 20V 50A POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 20V 50A (Tc) 3.5mOhm @ 18A, 4.5V 2.5V, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V ±12V TrenchFET®
SIE820DF-T1-E3 MOSFET N-CH 20V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 20V 50A (Tc) 3.5mOhm @ 18A, 4.5V 2.5V, 4.5V 2V @ 250µA 143nC @ 10V 4300pF @ 10V ±12V TrenchFET®
SIE822DF-T1-GE3 MOSFET N-CH 20V 50A POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 20V 50A (Tc) 3.4mOhm @ 18.3A, 10V 4.5V, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V ±20V TrenchFET®
SIE822DF-T1-E3 MOSFET N-CH 20V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 20V 50A (Tc) 3.4mOhm @ 18.3A, 10V 4.5V, 10V 3V @ 250µA 78nC @ 10V 4200pF @ 10V ±20V TrenchFET®
SIE832DF-T1-GE3 MOSFET N-CH 40V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 40V 50A (Tc) 5.5mOhm @ 14A, 10V 4.5V, 10V 3V @ 250µA 77nC @ 10V 3800pF @ 20V ±20V TrenchFET®
SIE800DF-T1-GE3 MOSFET N-CH 30V 50A POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 30V 50A (Tc) 7.2mOhm @ 11A, 10V 4.5V, 10V 3V @ 250µA 35nC @ 10V 1600pF @ 15V ±20V TrenchFET®
SIE800DF-T1-E3 MOSFET N-CH 30V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 30V 50A (Tc) 7.2mOhm @ 11A, 10V 4.5V, 10V 3V @ 250µA 35nC @ 10V 1600pF @ 15V ±20V TrenchFET®
SIE832DF-T1-E3 MOSFET N-CH 40V 50A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (S) Surface Mount 10-PolarPAK® (S) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 104W (Tc) 40V 50A (Tc) 5.5mOhm @ 14A, 10V 4.5V, 10V 3V @ 250µA 77nC @ 10V 3800pF @ 20V ±20V TrenchFET®
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