• Supplier Device Package
  • Manufacturer
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 25
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
SIE876DF-T1-GE3 MOSFET N-CH 60V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 60V 60A (Tc) 6.1mOhm @ 20A, 10V 10V 4.4V @ 250µA 77nC @ 10V 3100pF @ 30V ±20V TrenchFET®
SIE802DF-T1-GE3 MOSFET N-CH 30V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 30V 60A (Tc) 1.9mOhm @ 23.6A, 10V 4.5V, 10V 2.7V @ 250µA 160nC @ 10V 7000pF @ 15V ±20V TrenchFET®
SIE816DF-T1-E3 MOSFET N-CH 60V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 60V 60A (Tc) 7.4mOhm @ 19.8A, 10V 10V 4.4V @ 250µA 77nC @ 10V 3100pF @ 30V ±20V TrenchFET®
SIE810DF-T1-GE3 MOSFET N-CH 20V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 20V 60A (Tc) 1.4mOhm @ 25A, 10V 2.5V, 10V 2V @ 250µA 300nC @ 10V 13000pF @ 10V ±12V TrenchFET®
SIE878DF-T1-GE3 MOSFET N-CH 25V 45A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 25W (Tc) 25V 45A (Tc) 5.2mOhm @ 20A, 10V 4.5V, 10V 2.2V @ 250µA 36nC @ 10V 1400pF @ 12.5V ±20V TrenchFET®
SIE874DF-T1-GE3 MOSFET N-CH 20V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 20V 60A (Tc) 1.17mOhm @ 20A, 10V 4.5V, 10V 2.2V @ 250µA 145nC @ 10V 6200pF @ 10V ±20V TrenchFET®
SIE812DF-T1-E3 MOSFET N-CH 40V 60A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 40V 60A (Tc) 2.6mOhm @ 25A, 10V 4.5V, 10V 3V @ 250µA 170nC @ 10V 8300pF @ 20V ±20V TrenchFET®
SIE802DF-T1-E3 MOSFET N-CH 30V 60A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 30V 60A (Tc) 1.9mOhm @ 23.6A, 10V 4.5V, 10V 2.7V @ 250µA 160nC @ 10V 7000pF @ 15V ±20V TrenchFET®
SIE726DF-T1-GE3 MOSFET N-CH 30V 60A POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 30V 60A (Tc) 2.4mOhm @ 25A, 10V 4.5V, 10V 3V @ 250µA 160nC @ 10V 7400pF @ 15V ±20V SkyFET®, TrenchFET®
SIE810DF-T1-E3 MOSFET N-CH 20V 60A 10-POLARPAK Vishay Siliconix 10-PolarPAK® (L) Surface Mount 10-PolarPAK® (L) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 5.2W (Ta), 125W (Tc) 20V 60A (Tc) 1.4mOhm @ 25A, 10V 2.5V, 10V 2V @ 250µA 300nC @ 10V 13000pF @ 10V ±12V TrenchFET®
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