- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
PTFB093608FVV2S250XTMA1 | IC FET RF LDMOS H-362620-2 | Infineon Technologies | H-36260-2 | 112W | 960MHz | 65V | H-36260-2 | LDMOS | 19dB | 28V | 2.8A | |
A3V07H600-42NR6 | AIRFAST RF POWER LDMOS TRANSISTO | NXP USA Inc. | OM-1230-6L | 112W | 616MHz ~ 870MHz | 105V | 10µA | OM-1230-6L | LDMOS (Triple) | 16.9dB | 48V | 900mA |
- 10
- 15
- 50
- 100