• Power - Output
  • Manufacturer
  • Supplier Device Package
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 95
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
Series
BLF2043F,112 RF FET LDMOS 65V 11DB SOT467C Ampleon USA Inc. SOT467C 10W 2.2GHz 65V 2.2A SOT-467C LDMOS 11dB 26V 85mA
BLP15H9S10GZ BLP15H9S10G/SOT1483/REELDP Ampleon USA Inc. SOT1483-1 10W 1.4GHz 104V 1.4µA SOT-1483-1 LDMOS (Dual), Common Source 22dB 50V 60mA BLP
BLF2043,135 RF FET LDMOS 75V 12.5DB SOT467C Ampleon USA Inc. SOT467C 10W 2GHz 75V 2.2A SOT-467C LDMOS 12.5dB 26V 85mA
BLP8G20S-80PY RF FET LDMOS 65V 17DB SOT12231 Ampleon USA Inc. 4-HSOPF 10W 1.88GHz ~ 1.92GHz 65V SOT-1223-1 LDMOS (Dual), Common Source 17.5dB 28V 300mA
MRF21010LR1 RF S BAND, N-CHANNEL Freescale Semiconductor NI-360 10W 2.17GHz 65V NI-360 LDMOS 13.5dB 28V 100mA
PTF180101M V1 IC FET RF LDMOS 10W TSSOP-10 Infineon Technologies PG-RFP-10 10W 1.99GHz 65V 1µA 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) LDMOS 16.5dB 28V 180mA GOLDMOS®
MRF7P20040HSR5 FET RF 2CH 65V 2.03GHZ NI780HS-4 NXP USA Inc. NI-780S-4L 10W 2.03GHz 65V NI-780S-4L LDMOS (Dual) 18.2dB 32V 150mA
MRF6V2010NR1 FET RF 110V 220MHZ TO270-2 NXP USA Inc. TO-270-2 10W 220MHz 110V TO-270AA LDMOS 23.9dB 50V 30mA
MMRF1004GNR1 FET RF 68V 2.17GHZ TO270G-2 NXP USA Inc. TO-270-2 GULL 10W 2.17GHz 68V TO-270BA LDMOS 15.5dB 28V 130mA
MRF6V2010GNR1 FET RF 110V 220MHZ TO-270G-2 NXP USA Inc. TO-270G-2 10W 220MHz 110V TO-270BA LDMOS 23.9dB 50V 30mA
MW6S010NR1 FET RF 68V 960MHZ TO270-2 NXP USA Inc. TO-270-2 10W 960MHz 68V TO-270AA LDMOS 18dB 28V 125mA
MRF21010LSR1 FET RF 65V 2.17GHZ NI-360S NXP USA Inc. NI-360S 10W 2.17GHz 65V NI-360S LDMOS 13.5dB 28V 100mA
MRF6S9045NBR1 FET RF 68V 880MHZ TO-272-2 NXP USA Inc. TO-272-2 10W 880MHz 68V TO-272BC LDMOS 22.7dB 28V 350mA
PD85025-E FET RF 40V 870MHZ STMicroelectronics PowerSO-10RF (Formed Lead) 10W 870MHz 40V 7A PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) LDMOS 17.3dB 13.6V 300mA
PD20010STR-E TRANS N-CH 40V POWERSO-10RF STR STMicroelectronics PowerSO-10RF (Straight Lead) 10W 2GHz 40V 5A PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) LDMOS 11dB 13.6V 150mA
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