• Power - Output
  • Manufacturer
  • Supplier Device Package
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 95
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
Series
CLF1G0060-10 CLF1G0060-10 - 10W BROADBAND RF Ampleon USA Inc. SOT1227B 10W 6GHz 150V SOT-1227B GaN HEMT 16dB 50V 50mA
TM-10 TM-10 - 10W BROADBAND RF POWER G Ampleon USA Inc. SOT1227B 10W SOT-1227B GaN HEMT
BLA1011-10 OXIDE SEMICONDUCTOR FET Ampleon USA Inc. SOT467C 10W 1.03GHz ~ 1.09GHz 75V 100µA SOT-467C LDMOS 15dB 36V 50mA
MRF6S9045NR1 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor TO-270-2 10W 880MHz 68V TO-270AA LDMOS 22.7dB 28V 350mA
MRFG35010R5 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor NI-360HF 10W 3.55GHz 15V NI-360HF pHEMT FET 10dB 12V 180mA
PTF240101S V1 FET RF 65V 2.68GHZ H-32259-2 Infineon Technologies H-32259-2 10W 2.68GHz 65V 1µA H-32259-2 LDMOS 16dB 28V 180mA GOLDMOS®
PTF210101M V1 IC FET RF LDMOS 10W TSSOP-10 Infineon Technologies PG-RFP-10 10W 2.17GHz 65V 1µA 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) LDMOS 15dB 28V 180mA GOLDMOS®
PTF080101S V1 FET RF 65V 960MHZ H-32259-2 Infineon Technologies H-32259-2 10W 960MHz 65V 1µA H-32259-2 LDMOS 18.5dB 28V 150mA GOLDMOS®
MRF21010LSR5 FET RF 65V 2.17GHZ NI-360S NXP USA Inc. NI-360S 10W 2.17GHz 65V NI-360S LDMOS 13.5dB 28V 100mA
MRF5P21045NR1 FET RF 2CH 65V 2.17GHZ TO-270-4 NXP USA Inc. TO-270 WB-4 10W 2.11GHz ~ 2.17GHz 65V TO-270AB LDMOS (Dual) 14.5dB 28V 500mA
MMRF1015NR1 FET RF 68V 960MHZ TO270 NXP USA Inc. TO-270-2 10W 960MHz 68V TO-270-2 LDMOS 18dB 28V 125mA
MW6S010MR1 FET RF 68V 960MHZ TO-270-2 NXP USA Inc. TO-270-2 10W 960MHz 68V TO-270-2 LDMOS 18dB 28V 125mA
MRF21010LR5 FET RF 65V 2.17GHZ NI-360 NXP USA Inc. NI-360 10W 2.11GHz ~ 2.17GHz 65V NI-360 LDMOS 13.5dB 28V 100mA
PD20010-E TRANS RF N-CH FET POWERSO-10RF STMicroelectronics PowerSO-10RF (Formed Lead) 10W 2GHz 40V 5A PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) LDMOS 11dB 13.6V 150mA
PD85025STR-E TRANS RF N-CH FET POWERSO-10RF STMicroelectronics PowerSO-10RF (Straight Lead) 10W 870MHz 40V 7A PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) LDMOS 17.3dB 13.6V 300mA
  • 10
  • 15
  • 50
  • 100