• Power - Output
  • Manufacturer
  • Supplier Device Package
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 95
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
Series
BLF1043,135 RF FET LDMOS 65V 18.5DB SOT538A Ampleon USA Inc. 2-CSMD 10W 960MHz 65V 2.2A SOT-538A LDMOS 18.5dB 26V 85mA
BLF1043,112 RF FET LDMOS 65V 18.5DB SOT538A Ampleon USA Inc. 2-CSMD 10W 960MHz 65V 2.2A SOT-538A LDMOS 18.5dB 26V 85mA
BLF1822-10,112 RF FET LDMOS 65V 13.5DB SOT467C Ampleon USA Inc. SOT467C 10W 2.2GHz 65V 2.2A SOT-467C LDMOS 13.5dB 26V 85mA
CLF1G0060-10U RF FET HEMT 150V 14.5DB SOT1227A Ampleon USA Inc. CDFM2 10W 3GHz ~ 3.5GHz 150V SOT-1227A GaN HEMT 14.5dB 50V 50mA
BLF9G38-10GJ RF MOSFET LDMOS SOT975C Ampleon USA Inc. SOT-975C 10W 3.4GHz ~ 3.8GHz 28V SOT-975C LDMOS
MRF5S21045NBR1 FET RF 68V 2.12GHZ TO272-4 NXP USA Inc. TO-272 WB-4 10W 2.12GHz 68V TO-272BB LDMOS 14.5dB 28V 500mA
MRF6S9045MBR1 FET RF 68V 880MHZ TO-272-2 NXP USA Inc. TO-272-2 10W 880MHz 68V TO-272-2 LDMOS 22.7dB 28V 350mA
MRF6S20010GNR1 RF MOSFET LDMOS 28V TO270-2 GULL NXP USA Inc. TO-270-2 GULL 10W 2.17GHz 68V TO-270BA LDMOS 15.5dB 28V 130mA
MRF5S21045MBR1 FET RF 68V 2.17GHZ TO272-4 NXP USA Inc. TO-272 WB-4 10W 2.11GHz ~ 2.17GHz 68V TO-272-4 LDMOS 14.5dB 28V 500mA
MMRF1015GNR1 FET RF 68V 960MHZ NXP USA Inc. TO-270-2 GULL 10W 960MHz 68V TO-270BA LDMOS 18dB 28V 125mA
MRF6S9045NR1 RF MOSFET LDMOS 28V TO270-2 NXP USA Inc. TO-270-2 10W 880MHz 68V TO-270AA LDMOS 22.7dB 28V 350mA
MRF282SR1 FET RF 65V 2GHZ NI-200S NXP USA Inc. NI-200S 10W 2GHz 65V NI-200S LDMOS 11.5dB 26V 75mA
PD20010S-E TRANS RF N-CH FET POWERSO-10RF STMicroelectronics PowerSO-10RF (Straight Lead) 10W 2GHz 40V 5A PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) LDMOS 11dB 13.6V 150mA
PD85025S-E FET RF 40V 870MHZ STMicroelectronics PowerSO-10RF (Straight Lead) 10W 870MHz 40V 7A PowerSO-10 Exposed Bottom Pad LDMOS 17.3dB 13.6V 300mA
PD20010TR-E TRANS N-CH 40V POWERSO-10RF FORM STMicroelectronics PowerSO-10RF (Formed Lead) 10W 2GHz 40V 5A PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) LDMOS 11dB 13.6V 150mA
  • 10
  • 15
  • 50
  • 100