- Power - Output
- Manufacturer
- Supplier Device Package
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BLF645,112 | RF FET LDMOS 65V 16DB SOT540A | Ampleon USA Inc. | LDMOST | 100W | 1.3GHz | 65V | 32A | SOT-540A | LDMOS (Dual), Common Source | 16.5dB | 32V | 900mA | |
CLF1G0035-100PU | RF MOSFET HEMT 50V LDMOST | Ampleon USA Inc. | LDMOST | 100W | 3GHz | 150V | SOT-1228A | GaN HEMT | 14dB | 50V | 100mA | ||
CGHV22100F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 100W | 1.8GHz ~ 2.2GHz | 125V | 6A | 440162 | HEMT | 20dB | 50V | 500mA | GaN |
PTFA181001GL V1 R250 | IC FET RF LDMOS 100W PG-63248-2 | Infineon Technologies | PG-63248-2 | 100W | 1.88GHz | 65V | 1µA | 2-Flatpack, Fin Leads | LDMOS | 16.5dB | 28V | 750mA | |
PTFA181001HL V1 | IC FET RF LDMOS 100W PG-64248-2 | Infineon Technologies | PG-64248-2 | 100W | 1.88GHz | 65V | 1µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 16.5dB | 28V | 750mA | |
ARF463BP1G | RF PWR MOSFET 500V 9A TO-247 | Microchip Technology | TO-247 | 100W | 81.36MHz | 500V | 9A | TO-247-3 | N-Channel | 15dB | 125V | ||
ARF463BG | RF PWR MOSFET 500V 9A TO-247 | Microchip Technology | TO-247 | 100W | 81.36MHz | 500V | 9A | TO-247-3 | N-Channel | 15dB | 125V | 50mA | |
A3T09S100NR1 | AIRFAST RF POWER LDMOS TRANSISTO | NXP USA Inc. | TO-270-2 | 100W | 136MHz ~ 941MHz | 65V | 10µA | TO-270-2 | LDMOS | 22.8dB | 28V | 450mA | |
BLF4G20-110B,112 | FET RF 65V 1.99GHZ SOT502A | NXP USA Inc. | LDMOST | 100W | 1.93GHz ~ 1.99GHz | 65V | 12A | SOT-502A | LDMOS | 13.5dB | 28V | 700mA | |
MMRF1305HSR5 | FET RF 2CH 133V 512MHZ NI780S-4 | NXP USA Inc. | NI-780S-4L | 100W | 512MHz | 133V | NI-780S-4L | LDMOS (Dual) | 26dB | 50V | 100mA | ||
MRF8P9300HSR6 | FET RF 2CH 70V 960MHZ NI-1230HS | NXP USA Inc. | NI-1230S | 100W | 960MHz | 70V | NI-1230S | LDMOS (Dual) | 19.4dB | 28V | 2.4A | ||
CLF1G0035-100,112 | RF SMALL SIGNAL FIELD-EFFECT TRA | NXP USA Inc. | SOT467C | 100W | 3GHz | 150V | SOT-467C | GaN HEMT | 12dB | 50V | 330mA | ||
MRFE6VP100HR5 | RF MOSFET LDMOS 50V NI780-4 | NXP USA Inc. | NI-780-4 | 100W | 512MHz | 133V | NI-780-4 | LDMOS | 26dB | 50V | 100mA | ||
CLF1G0035-100P | CLF1G0035-100 - 100W BROADBAND R | Rochester Electronics, LLC | LDMOST | 100W | 3.5GHz | 150V | SOT-1228A | HEMT | 12.5dB | 50V | 330mA | ||
SD56120C | FET RF 72V 860MHZ M246 | STMicroelectronics | M246 | 100W | 860MHz | 72V | 14A | M246 | LDMOS | 16dB | 28V | 400mA |
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