• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 25
  • SIE876DF-T1-GE3
    MOSFET N-CH 60V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • SIE802DF-T1-GE3
    MOSFET N-CH 30V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 23.6A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE816DF-T1-E3
    MOSFET N-CH 60V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 19.8A, 10V
    • Vgs(th) (Max) @ Id: 4.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • SIE810DF-T1-GE3
    MOSFET N-CH 20V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • SIE878DF-T1-GE3
    MOSFET N-CH 25V 45A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE874DF-T1-GE3
    MOSFET N-CH 20V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.17mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE812DF-T1-E3
    MOSFET N-CH 40V 60A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE802DF-T1-E3
    MOSFET N-CH 30V 60A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 23.6A, 10V
    • Vgs(th) (Max) @ Id: 2.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE726DF-T1-GE3
    MOSFET N-CH 30V 60A POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: SkyFET®, TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIE810DF-T1-E3
    MOSFET N-CH 20V 60A 10-POLARPAK
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Series: TrenchFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 10-PolarPAK® (L)
    • Supplier Device Package: 10-PolarPAK® (L)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • 10
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