Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Texas Instruments DDPAK/TO-263-3

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 20
  • CSD19536KTTT
    MOSFET N-CH 100V 200A TO263
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD18535KTTT
    MOSFET N-CH 60V 200A D2PAK
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
    • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD19536KTT
    MOSFET N-CH 100V 200A TO263
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19505KTTT
    MOSFET N-CH 80V 200A DDPAK-3
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7920pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19532KTTT
    MOSFET N-CH 100V TO-263-3
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19506KTT
    MOSFET N-CH 80V 200A DDPAK-3
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD18511KTT
    GEN1.4 40V-20V
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 194A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 188W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD18536KTTT
    MOSFET N-CH 60V 200A D2PAK
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11430pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD18510KTTT
    40V N-CHANNEL NEXFET POWER MOSF
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD18511KTTT
    40-V N-CHANNEL NEXFET POWER MOS
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Ta), 194A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 188W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD18535KTT
    MOSFET N-CH 60V 200A
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6620pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • CSD19506KTTT
    IC MOSFET N-CH 80V TO-220
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19505KTT
    MOSFET N-CH 80V 200A DDPAK-3
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7920pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19535KTT
    MOSFET N-CH 100V 200A TO263
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • CSD19532KTT
    MOSFET N-CH 100V 200A DDPAK-3
    Texas Instruments
    • Manufacturer: Texas Instruments
    • Series: NexFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
    • Supplier Device Package: DDPAK/TO-263-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
    • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 3.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5060pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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