Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology SP6-P

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 20
  • MSCSM70TAM10CTPAG
    PM-MOSFET-SIC-SBD~-SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
    • Power - Max: 674W (Tc)
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  • APTM100TA35SCTPG
    MOSFET 6N-CH 1000V 22A SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: POWER MOS 7®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 22A
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
    • Power - Max: 390W
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  • MSCSM120TAM11CTPAG
    PM-MOSFET-SIC-SBD~-SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
    • Power - Max: 1.042kW (Tc)
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  • APTC80TA15PG
    MOSFET 6N-CH 800V 28A SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 28A
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
    • Power - Max: 277W
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  • APTM100TA35FPG
    MOSFET 6N-CH 1000V 22A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1000V (1kV)
    • Current - Continuous Drain (Id) @ 25°C: 22A
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
    • Power - Max: 390W
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  • APTMC120TAM17CTPAG
    MOSFET 6N-CH 1200V 147A SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V
    • Power - Max: 625W
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  • APTC60TDUM35PG
    MOSFET 6N-CH 600V 72A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 72A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
    • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Power - Max: 416W
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  • MSCSM120TAM16CTPAG
    PM-MOSFET-SIC-SBD~-SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
    • Vgs(th) (Max) @ Id: 2.8V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
    • Power - Max: 728W (Tc)
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  • APTM20TAM16FPG
    MOSFET 6N-CH 200V 104A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 104A
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
    • Power - Max: 390W
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  • APTM10TAM19FPG
    MOSFET 6N-CH 100V 70A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 70A
    • Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
    • Power - Max: 208W
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  • APTMC120TAM12CTPAG
    MOSFET 6N-CH 1200V 220A SP6P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
    • Power - Max: 925W
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  • APTM08TAM04PG
    MOSFET 6N-CH 75V 120A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 120A
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V
    • Power - Max: 138W
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  • APTMC120TAM33CTPAG
    MOSFET 6N-CH 1200V 78A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 60A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V
    • Power - Max: 370W
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  • APTC60TAM24TPG
    MOSFET 6N-CH 600V 95A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: CoolMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 95A
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Power - Max: 462W
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  • APTC80TDU15PG
    MOSFET 6N-CH 800V 28A SP6-P
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SP6
    • Supplier Device Package: SP6-P
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 28A
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
    • Power - Max: 277W
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