• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 8
  • MIC94051YM4-TR
    MOSFET P-CH 6V 1.8A 8MSOP
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: SymFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 6V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): -6V
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  • MIC94030YM4-TR
    MOSFET P-CH 16V 1A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: TinyFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 16V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
    • Vgs (Max): 16V
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  • MIC94030BM4 TR
    MOSFET P-CH 16V 1A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: TinyFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 16V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
    • Vgs (Max): 16V
    Info from the market
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  • MIC94031BM4 TR
    MOSFET P-CH 16V 1A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: TinyFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 16V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
    • Vgs (Max): 16V
    Info from the market
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  • MIC94050BM4 TR
    MOSFET P-CH 6V 1.8A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: SymFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 6V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): -6V
    Info from the market
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  • MIC94050YM4-TR
    MOSFET P-CH 6V 1.8A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: SymFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 6V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): -6V
    Info from the market
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  • MIC94051BM4 TR
    MOSFET P-CH 6V 1.8A 8MSOP
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: SymFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 6V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): -6V
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  • MIC94031YM4-TR
    MOSFET P-CH 16V 1A SOT-143
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: TinyFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-253-4, TO-253AA
    • Supplier Device Package: SOT-143
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 16V
    • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
    • Rds On (Max) @ Id, Vgs: 450mOhm @ 100mA, 10V
    • Vgs(th) (Max) @ Id: 1.4V @ 250µA
    • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 568mW (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
    • Vgs (Max): 16V
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