Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology 8-PDFN (5x6)

Found: 6
  • MOSFET N-CH 25V 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 1.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): +10V, -8V
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  • MOSFET N-CH 25V 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
    • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 1.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
    • Vgs (Max): +10V, -8V
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  • MOSFET N-CH 25V 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
    • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10V
    • Vgs(th) (Max) @ Id: 1.7V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): +10V, -8V
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  • MOSFET N-CH 25V 100A 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 1.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2925pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
    • Vgs (Max): +10V, -8V
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  • MOSFET N-CH 25V 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 1.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): +10V, -8V
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  • MOSFET N-CH 25V 100A 8PDFN
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PDFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 1.6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 12.5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): +10V, -8V
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