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  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
Found: 472
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
VRF2933 MOSFET RF PWR N-CH 50V 300W M177 Microchip Technology M177 300W 150MHz 170V 2mA M177 N-Channel 25dB 50V 250mA
MSC017SMA120J MOSFET SIC 1200V 17 MOHM SOT-227 Microchip Technology
DN2535N3-G-P013 MOSFET N-CH 350V 0.12A TO92-3 Microchip Technology TO-92 (TO-226) Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1W (Tc) 350V 120mA (Tj) Depletion Mode 25Ohm @ 120mA, 0V 0V 300pF @ 25V ±20V
DN3145N8-G MOSFET N-CH 450V 0.1A SOT89-3 Microchip Technology TO-243AA (SOT-89) Surface Mount TO-243AA MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1.3W (Ta) 450V 100mA (Tj) Depletion Mode 60Ohm @ 100mA, 0V 0V 120pF @ 25V ±20V
VRF2933MP RF MOSFET N-CHANNEL 50V M177 Microchip Technology M177 300W 150MHz 170V 2mA M177 N-Channel 25dB 50V 250mA
MSCSM70AM025CT6AG PM-MOSFET-SIC-SBD~-SP6C Microchip Technology SP6C Chassis Mount Module 700V 538A (Tc)
DN2625DK6-G MOSFET 2N-CH 250V 1.1A 8VDFN Microchip Technology 8-DFN (5x5) Surface Mount 8-VDFN Exposed Pad -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 250V 1.1A Depletion Mode 3.5Ohm @ 1A, 0V 7.04nC @ 1.5V 1000pF @ 25V
MSCSM70VM19C3AG PM-MOSFET-SIC-SBD~-SP3F Microchip Technology SP3F 365W (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 2 N Channel (Phase Leg) 700V 124A (Tc) Silicon Carbide (SiC) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V
MSCC60VRM99CT3AG PM-MOSFET-COOLMOS-SBD-SP3F Microchip Technology SP3F Chassis Mount Module 600V 19A (Tc)
MSCM20XM10T3XG PM-MOSFET-OTHER-SP3X Microchip Technology SP3X 341W (Tc) Chassis Mount Module -40°C ~ 125°C (TC) 6 N-Channel (3-Phase Bridge) 200V 108A (Tc) Standard 9.7mOhm @ 81A, 10V 5V @ 250µA 161nC @ 10V 10.7nF @ 50V
MSCSM70TAM10CTPAG PM-MOSFET-SIC-SBD~-SP6P Microchip Technology SP6-P 674W (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 6 N-Channel (3-Phase Bridge) 700V 238A (Tc) Silicon Carbide (SiC) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V
TC8220K6-G MOSFET 2N/2P-CH 200V 12VDFN Microchip Technology 12-DFN (4x4) Surface Mount 12-VFDFN Exposed Pad -55°C ~ 150°C (TJ) 2 N and 2 P-Channel 200V Standard 6Ohm @ 1A, 10V 2.4V @ 1mA 56pF @ 25V
APTC80A15SCTG MOSFET 2N-CH 800V 28A SP4 Microchip Technology SP4 277W Chassis Mount SP4 -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 800V 28A Standard 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V
APTM100TA35SCTPG MOSFET 6N-CH 1000V 22A SP6P Microchip Technology SP6-P 390W Chassis Mount Module -40°C ~ 150°C (TJ) 6 N-Channel (3-Phase Bridge) 1000V (1kV) 22A Standard 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V POWER MOS 7®
TN2540N3-G-P002 MOSFET N-CH 400V 0.175A TO92-3 Microchip Technology TO-92-3 Through Hole TO-226-3, TO-92-3 (TO-226AA) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 1W (Ta) 400V 175mA (Tj) 12Ohm @ 500mA, 10V 4.5V, 10V 2V @ 1mA 125pF @ 25V ±20V