- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
VRF2933 | MOSFET RF PWR N-CH 50V 300W M177 | Microchip Technology | M177 | 300W | 150MHz | 170V | 2mA | M177 | N-Channel | 25dB | 50V | 250mA | ||||||||||||||||
MSC017SMA120J | MOSFET SIC 1200V 17 MOHM SOT-227 | Microchip Technology | ||||||||||||||||||||||||||
DN2535N3-G-P013 | MOSFET N-CH 350V 0.12A TO92-3 | Microchip Technology | TO-92 (TO-226) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Tc) | 350V | 120mA (Tj) | Depletion Mode | 25Ohm @ 120mA, 0V | 0V | 300pF @ 25V | ±20V | ||||||||||||
DN3145N8-G | MOSFET N-CH 450V 0.1A SOT89-3 | Microchip Technology | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.3W (Ta) | 450V | 100mA (Tj) | Depletion Mode | 60Ohm @ 100mA, 0V | 0V | 120pF @ 25V | ±20V | ||||||||||||
VRF2933MP | RF MOSFET N-CHANNEL 50V M177 | Microchip Technology | M177 | 300W | 150MHz | 170V | 2mA | M177 | N-Channel | 25dB | 50V | 250mA | ||||||||||||||||
MSCSM70AM025CT6AG | PM-MOSFET-SIC-SBD~-SP6C | Microchip Technology | SP6C | Chassis Mount | Module | 700V | 538A (Tc) | |||||||||||||||||||||
DN2625DK6-G | MOSFET 2N-CH 250V 1.1A 8VDFN | Microchip Technology | 8-DFN (5x5) | Surface Mount | 8-VDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 250V | 1.1A | Depletion Mode | 3.5Ohm @ 1A, 0V | 7.04nC @ 1.5V | 1000pF @ 25V | |||||||||||||||
MSCSM70VM19C3AG | PM-MOSFET-SIC-SBD~-SP3F | Microchip Technology | SP3F | 365W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 2 N Channel (Phase Leg) | 700V | 124A (Tc) | Silicon Carbide (SiC) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | |||||||||||||
MSCC60VRM99CT3AG | PM-MOSFET-COOLMOS-SBD-SP3F | Microchip Technology | SP3F | Chassis Mount | Module | 600V | 19A (Tc) | |||||||||||||||||||||
MSCM20XM10T3XG | PM-MOSFET-OTHER-SP3X | Microchip Technology | SP3X | 341W (Tc) | Chassis Mount | Module | -40°C ~ 125°C (TC) | 6 N-Channel (3-Phase Bridge) | 200V | 108A (Tc) | Standard | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10.7nF @ 50V | |||||||||||||
MSCSM70TAM10CTPAG | PM-MOSFET-SIC-SBD~-SP6P | Microchip Technology | SP6-P | 674W (Tc) | Chassis Mount | Module | -40°C ~ 175°C (TJ) | 6 N-Channel (3-Phase Bridge) | 700V | 238A (Tc) | Silicon Carbide (SiC) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | |||||||||||||
TC8220K6-G | MOSFET 2N/2P-CH 200V 12VDFN | Microchip Technology | 12-DFN (4x4) | Surface Mount | 12-VFDFN Exposed Pad | -55°C ~ 150°C (TJ) | 2 N and 2 P-Channel | 200V | Standard | 6Ohm @ 1A, 10V | 2.4V @ 1mA | 56pF @ 25V | ||||||||||||||||
APTC80A15SCTG | MOSFET 2N-CH 800V 28A SP4 | Microchip Technology | SP4 | 277W | Chassis Mount | SP4 | -40°C ~ 150°C (TJ) | 2 N-Channel (Half Bridge) | 800V | 28A | Standard | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||||||||||||
APTM100TA35SCTPG | MOSFET 6N-CH 1000V 22A SP6P | Microchip Technology | SP6-P | 390W | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1000V (1kV) | 22A | Standard | 420mOhm @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | 5200pF @ 25V | POWER MOS 7® | ||||||||||||
TN2540N3-G-P002 | MOSFET N-CH 400V 0.175A TO92-3 | Microchip Technology | TO-92-3 | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 400V | 175mA (Tj) | 12Ohm @ 500mA, 10V | 4.5V, 10V | 2V @ 1mA | 125pF @ 25V | ±20V |
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