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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.25W
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±10V
-
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.25W
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±8V
-
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA
- Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
-
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 482pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1W
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±10V
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