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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.4W
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 1.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 30V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 1.155nF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 400mW
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±12V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 237pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.25W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs (Max): ±8V
-
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs (Max): ±10V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 750mW
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.2W
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 250mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 225mW
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 1.8V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 350mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs (Max): ±8V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 830mW
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Micro Commercial Co
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 200mW (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
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