Found: 6
  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 66.1nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 105W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1552pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 30W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 50A
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 75W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL,MOSFETS,DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 85W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL MOSFET, DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 80A
    • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 101.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6124pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 85W
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • N-CHANNEL,MOSFETS,DFN5060 PACKAG
    Micro Commercial Co
    • Manufacturer: Micro Commercial Co
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: DFN5060
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 70W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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