• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 163
  • IXFH28N60P3
    MOSFET N-CH 600V 28A TO247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
    • Rds On (Max) @ Id, Vgs: 260mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 695W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH30N50
    MOSFET N-CH 500V 30A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH18N60P
    MOSFET N-CH 600V 18A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
    • Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH12N100F
    MOSFET N-CH 1000V 12A TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerRF™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-3P-3 Full Pack
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH26N50
    MOSFET N-CH 500V 26A TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH160N15T
    MOSFET N-CH 150V 160A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH60N50P3
    MOSFET N-CH 500V 60A TO247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1040W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH12N80P
    MOSFET N-CH 800V 12A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH9N80Q
    MOSFET N-CH 800V 9A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 180W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH15N100Q3
    MOSFET N-CH 1000V 15A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 690W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH66N20Q
    MOSFET N-CH 200V 66A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 33A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH40N30
    MOSFET N-CH 300V 40A TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH24N90P
    MOSFET N-CH TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 660W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH24N50Q
    MOSFET N-CH 500V 24A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFH40N50Q
    MOSFET N-CH 500V 40A TO-247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AD (IXFH)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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