Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS TO-220 Isolated Tab

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 27
  • IXFP30N25X3M
    MOSFET N-CHANNEL 250V 30A TO220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP18N60PM
    MOSFET N-CH TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 90W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP90N20X3M
    200V/90A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP230N04T4M
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFP18N65X2M
    DISCMSFT NCHULTRAJNCTX2CLASS TO-
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 290W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP24N65X2M
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 37W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP36N20X3M
    200V/36A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP12N70X2M
    DISCMSFT NCHULTRAJNCTX2CLASS TO-
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP76N25TM
    DISCMSFT NCHTRENCHGATE-GEN1 TO-2
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
    • Rds On (Max) @ Id, Vgs: 44mOhm @ 38A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4920pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP72N30X3M
    300V/72A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5.4nF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP12N65X2M
    MOSFET N-CH TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1134pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP56N30X3M
    FET N-CHANNEL
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP72N20X3M
    200V/72A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP5N100PM
    MOSFET N-CH 1000V 2.3A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 42W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP22N65X2M
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220 Isolated Tab
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 37W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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