Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS TO-220ABFP

Found: 4
  • MOSFET N-CH 600V 6.5A TO220FP
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220ABFP
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 6.6A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 440µA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 600V 7.6A TO220FP
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220ABFP
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 600V 8.5A TO220FP
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220ABFP
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 790µA
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 600V 5.4A TO220ABFP
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Supplier Device Package: TO-220ABFP
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 340µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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