• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 212
  • IXTP12N70X2
    DISCMSFT NCHULTRAJNCTX2CLASS TO-
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 700V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 180W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTY08N120P
    MOSFET N-CH 1200V 8A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXTP48N20T
    MOSFET N-CH 200V 48A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP76P10T
    MOSFET P-CH 100V 76A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 298W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXTP130N10T
    MOSFET N-CH 100V 130A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP96P085T
    MOSFET P-CH 85V 96A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 298W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXTP28P065T
    MOSFET P-CH 65V 28A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 65V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFP20N50P3M
    MOSFET N-CH 500V 8A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 58W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP110N055T
    MOSFET N-CH 55V 110A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP140N055T2
    MOSFET N-CH 55V 140A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP08N100D2
    MOSFET N-CH 1000V 0.8A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
    • Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
    • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 60W (Tc)
    • Vgs (Max): ±20V
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  • IXTP3N60P
    MOSFET N-CH 600V 3A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 70W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP44N25T
    MOSFET N-CH 250V 44A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXTP152N085T
    MOSFET N-CH 85V 152A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP180N055T
    MOSFET N-CH 55V 180A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Technology: MOSFET (Metal Oxide)
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