• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 21
  • IXFP72N20X3
    200V/72A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP4N85XM
    MOSFET N-CH 850V 3.5A TO220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 35W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP90N20X3
    200V/90A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 390W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP20N65XM
    MOSFET N-CH 650V 9A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
    • Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 63W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP8N65X2
    MOSFET N-CH 650V 8A X2 TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP4N65X2
    MOSFET N-CH 650V 4A X2 TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
    • Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 80W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP36N20X3
    200V/36A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 176W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP130N15X4
    MOSFET N-CH 150V 130A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4770pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP20N65X
    MOSFET N-CH 650V 20A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP8N65X2M
    MOSFET N-CH 650V 4A X2 TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 32W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP38N30X3
    FET N-CHANNEL
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 240W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP30N60X
    MOSFET N-CH 600V 30A TO220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP16N60P3
    MOSFET N-CH 600V 16A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 347W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP22N65X2
    MOSFET N-CH 650V 22A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 390W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP100N15X4
    MOSFET N-CH 150V 100A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 375W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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