• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 114
  • IXFX140N25T
    MOSFET N-CH 250V 140A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 960W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX120N30P3
    MOSFET N-CH 300V 120A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8630pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1130W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTX110N20L2
    MOSFET N-CH 200V 110A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 960W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX48N50Q
    MOSFET N-CH 500V 48A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX38N80Q2
    MOSFET N-CH 800V 38A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 735W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFX210N30X3
    300V/210A ULTRA JUNCTION X3-CLAS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 24.2nF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTX600N04T2
    MOSFET N-CH 40V 600A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: FRFET®, SupreMOS®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX24N100F
    MOSFET N-CH 1000V 24A PLUS247-3
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerRF™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 560W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX62N25
    MOSFET N-CH 250V 62A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 390W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX50N50
    MOSFET N-CH 500V 50A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX260N17T
    MOSFET N-CH 170V 260A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 170V
    • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1670W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX520N075T2
    MOSFET N-CH 75V 520A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 520A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX360N10T
    MOSFET N-CH 100V 360A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 525nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 33000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFX220N17T2
    MOSFET N-CH 170V 220A PLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 170V
    • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTX240N075L2
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PLUS247™-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 546nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 960W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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