Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS Module
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 590A (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 2200W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100