Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS ISOPLUS264™

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 17
  • IXFL40N110P
    MOSFET N-CH 1100V 21A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1100V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL60N80P
    MOSFET N-CH 800V 40A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFB30N120Q2
    MOSFET N-CH 1200V 30A PLUS264
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFL60N60
    MOSFET N-CH 600V 60A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 80mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFL80N50Q2
    MOSFET N-CH 500V 64A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Rds On (Max) @ Id, Vgs: 66mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL210N30P3
    MOSFET N-CH 300V 108A TO-264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFL55N50
    MOSFET N-CH 500V 55A TO-264AA
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • LKK47-06C5
    MOSFET 2N-CH 600V 47A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: ISOPLUS264™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 47A
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
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  • IXFL70N60Q2
    MOSFET N-CH 600V 37A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
    • Rds On (Max) @ Id, Vgs: 92mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL44N80
    MOSFET N-CH 800V 44A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 550W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFL100N50P
    MOSFET N-CH 500V 70A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
    • Rds On (Max) @ Id, Vgs: 52mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL39N90
    MOSFET N-CH 900V 34A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 580W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFL44N100P
    MOSFET N-CH 1000V 22A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 357W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL132N50P3
    MOSFET N-CH 500V 63A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFL44N60
    MOSFET N-CH 600V 41A ISOPLUS264
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS264™
    • Supplier Device Package: ISOPLUS264™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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