• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 57
  • IXFC14N80P
    MOSFET N-CH 800V 8A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 770mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 130W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXKC15N60C5
    MOSFET N-CH 600V 15A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 900µA
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXKC40N60C
    MOSFET N-CH 600V 28A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
    • Rds On (Max) @ Id, Vgs: 95mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC14N60P
    MOSFET N-CH 600V 8A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTC180N055T
    MOSFET N-CH 55V ISOPLUS 220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Technology: MOSFET (Metal Oxide)
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  • IXTC280N055T
    MOSFET N-CH 55V 145A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC36N50P
    MOSFET N-CH 500V 19A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFC24N50
    MOSFET N-CH 500V 21A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC16N50P
    MOSFET N-CH 500V 10A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 450mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTC180N085T
    MOSFET N-CH 85V 110A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTC180N10T
    MOSFET N-CH 100V 90A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
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  • IXTC250N075T
    MOSFET N-CH 75V 128A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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