• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 57
  • IXFC15N80Q
    MOSFET N-CH 800V 13A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC26N50P
    MOSFET N-CH 500V 15A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 130W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTC240N055T
    MOSFET N-CH 55V 132A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTC160N085T
    MOSFET N-CH 85V 110A ISOPLUS 220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFC24N50Q
    MOSFET N-CH 500V 21A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 10.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC80N10
    MOSFET N-CH 100V 80A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC80N08
    MOSFET N-CH 80V 80A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTC220N055T
    MOSFET N-CH 55V 130A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTC102N20T
    MOSFET N-CH 200V ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Technology: MOSFET (Metal Oxide)
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  • IXFC10N80P
    MOSFET N-CH 800V 5A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFC110N10P
    MOSFET N-CH 100V 60A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 55A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 120W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXKC19N60C5
    MOSFET N-CH 600V 19A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
    • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFC20N80P
    MOSFET N-CH 800V 11A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 166W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTC230N085T
    MOSFET N-CH 85V 120A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFC74N20P
    MOSFET N-CH 200V 35A ISOPLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS220™
    • Supplier Device Package: ISOPLUS220™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 36mOhm @ 37A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 120W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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