-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Rds On (Max) @ Id, Vgs: 650mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 130W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 230W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Manufacturer: IXYS
- Series: CoolMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: IXYS
- Series: TrenchMV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 160W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 140W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: IXYS
- Series: PolarP™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 150W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 150V
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 250V
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Rds On (Max) @ Id, Vgs: 930mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 120W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
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- Manufacturer: IXYS
- Series: MegaMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 230W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 130W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100