-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
-
- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUS-DIL™
- Supplier Device Package: ISOPLUS-DIL™
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
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- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL™
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 110A
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
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- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL™
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A
- Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
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