• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 14
  • MMIX1F160N30T
    MOSFET N-CH 300V 102A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 570W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F520N075T2
    MOSFET N-CH 75V 500A
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 545nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 41000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F420N10T
    MOSFET N-CH 100V 334A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 680W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F230N20T
    MOSFET N-CH 200V 168A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F360N15T2
    MOSFET N-CH 150V 235A
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 680W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F180N25T
    MOSFET N-CH 250V 130A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 570W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX2F60N50P3
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-SMD Module, 9 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
    • Power - Max: 320W
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  • MMIX1F40N110P
    MOSFET N-CH 1100V 24A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1100V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 290mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MMIX1F210N30P3
    MOSFET N-CH 300V 108A MMIX
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Surface Mount
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • MMIX1T660N04T4
    DISC MSFT SMPD PKG-HIPERFETMSFT
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
    • Rds On (Max) @ Id, Vgs: 850µOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 860nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • MMIX1T600N04T2
    MOSFET N-CH 40V 600A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: FRFET®, SupreMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MMIX1F44N100Q3
    MOSFET N-CH 1000V 30A
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 245mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 694W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MMIX1F132N50P3
    MOSFET N-CH 500V 63A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MMIX1T550N055T2
    MOSFET N-CH 55V 550A SMPD
    IXYS
    • Manufacturer: IXYS
    • Series: FRFET®, SupreMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 24-PowerSMD, 21 Leads
    • Supplier Device Package: 24-SMPD
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.8V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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