Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single International Rectifier DIRECTFET™ SA
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: International Rectifier
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: DirectFET™ Isometric SA
- Supplier Device Package: DIRECTFET™ SA
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 15A
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 10V
- Power - Max: 1.7W
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