• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 19
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
IRF7328PBF IRF7328 - 20V-250V P-CHANNEL POW International Rectifier 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 30V 8A Logic Level Gate 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V HEXFET®
IRF8915PBF HEXFET POWER MOSFET International Rectifier 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 8.9A Logic Level Gate 18.3mOhm @ 8.9A, 10V 2.5V @ 250µA 7.4nC @ 4.5V 540pF @ 10V HEXFET®
IRF7306PBF AUTOMOTIVE HEXFET P-CHANNEL International Rectifier 8-SO 2W (Ta) Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 30V 3.6A (Ta) Logic Level Gate 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V HEXFET®
IRF7101PBF HEXFET POWER MOSFET International Rectifier 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 20V 3.5A Logic Level Gate 100mOhm @ 1.8A, 10V 3V @ 250µA 15nC @ 10V 320pF @ 15V HEXFET®
  • 10
  • 15
  • 50
  • 100