• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 12
  • IRF6720S2TRPBF
    MOSFET N-CH 30V 11A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6709S2TRPBF
    MOSFET N-CH 25V 12A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6710S2TRPBF
    MOSFET N-CH 25V 12A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6810STR1PBF
    MOSFET N CH 25V 16A S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IRF6709S2TR1PBF
    MOSFET N-CH 25V 12A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 21W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6810STRPBF
    MOSFET N CH 25V 16A S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IRF6708S2TRPBF
    MOSFET N-CH 30V 13A DIRECTFET-LV
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6710S2TR1PBF
    MOSFET N-CH 25V 12A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 15W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6708S2TR1PBF
    MOSFET N-CH 30V 13A DIRECTFET-LV
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 20W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6706S2TRPBF
    MOSFET N-CH 25V DIRECTFET S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6720S2TR1PBF
    MOSFET N-CH 30V 11A DIRECTFET
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.7W (Ta), 17W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6706S2TR1PBF
    MOSFET N-CH 25V 17A DIRECTFET-S1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: DirectFET™ Isometric S1
    • Supplier Device Package: DIRECTFET S1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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