-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9Z24NS | MOSFET P-CH 55V 12A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 45W (Tc) | 55V | 12A (Tc) | 175mOhm @ 7.2A, 10V | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | HEXFET® |
| IRL3715ZSTRL | MOSFET N-CH 20V 50A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 45W (Tc) | 20V | 50A (Tc) | 11mOhm @ 15A, 10V | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 870pF @ 10V | ±20V | HEXFET® |
| IRF530NS | MOSFET N-CH 100V 17A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 70W (Tc) | 100V | 17A (Tc) | 90mOhm @ 9A, 10V | 10V | 4V @ 250µA | 37nC @ 10V | 920pF @ 25V | ±20V | HEXFET® |
| IRL3713STRRPBF | MOSFET N-CH 30V 260A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 330W (Tc) | 30V | 260A (Tc) | 3mOhm @ 38A, 10V | 4.5V, 10V | 2.5V @ 250µA | 110nC @ 4.5V | 5890pF @ 15V | ±20V | HEXFET® |
| IRLS3034PBF | MOSFET N-CH 40V 195A D2-PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 40V | 195A (Tc) | 1.7mOhm @ 195A, 10V | 4.5V, 10V | 2.5V @ 250µA | 162nC @ 4.5V | 10315pF @ 25V | ±20V | HEXFET® |
| IRFS7537PBF | MOSFET N CH 60V 173A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 60V | 173A (Tc) | 3.3mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | HEXFET®, StrongIRFET™ |
| IRF520NSTRR | MOSFET N-CH 100V 9.7A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 48W (Tc) | 100V | 9.7A (Tc) | 200mOhm @ 5.7A, 10V | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | HEXFET® |
| IRL8113SPBF | MOSFET N-CH 30V 105A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 110W (Tc) | 30V | 105A (Tc) | 6mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | ±20V | HEXFET® |
| IRL3402S | MOSFET N-CH 20V 85A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 110W (Tc) | 20V | 85A (Tc) | 8mOhm @ 51A, 7V | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | HEXFET® |
| IRL3103D1SPBF | MOSFET N-CH 30V 64A D2PAK-5 | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 89W (Tc) | 30V | 64A (Tc) | 14mOhm @ 34A, 10V | 4.5V, 10V | 1V @ 250µA | 43nC @ 4.5V | 1900pF @ 25V | ±16V | FETKY™ |
| IRF3711ZSTRL | MOSFET N-CH 20V 92A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 79W (Tc) | 20V | 92A (Tc) | 6mOhm @ 15A, 10V | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | HEXFET® |
| AUIRF6218S | MOSFET P-CH 150V 27A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 250W (Tc) | 150V | 27A (Tc) | 150mOhm @ 16A, 10V | 10V | 5V @ 250µA | 110nC @ 10V | 2210pF @ 25V | ±20V | HEXFET® |
| IRF3707ZCSTRR | MOSFET N-CH 30V 59A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET® |
| IRF1302S | MOSFET N-CH 20V 174A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 20V | 174A (Tc) | 4mOhm @ 104A, 10V | 10V | 4V @ 250µA | 120nC @ 10V | 3600pF @ 25V | ±20V | HEXFET® |
| IRF1010EZSTRLP | MOSFET N-CH 60V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 140W (Tc) | 60V | 75A (Tc) | 8.5mOhm @ 51A, 10V | 10V | 4V @ 100µA | 86nC @ 10V | 2810pF @ 25V | ±20V | HEXFET® |
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