-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF1503SPBF | MOSFET N-CH 30V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 30V | 75A (Tc) | 3.3mOhm @ 140A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 5730pF @ 25V | ±20V | HEXFET® |
| IRFZ48VS | MOSFET N-CH 60V 72A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 60V | 72A (Tc) | 12mOhm @ 43A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | ±20V | HEXFET® |
| AUIRFS4410Z | MOSFET N-CH 100V 97A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 100V | 97A (Tc) | 9mOhm @ 58A, 10V | 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | ±20V | HEXFET® |
| IRFS59N10DTRRP | MOSFET N-CH 100V 59A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 100V | 59A (Tc) | 25mOhm @ 35.4A, 10V | 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | ±30V | HEXFET® |
| AUIRL1404ZS | MOSFET N-CH 40V 160A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 40V | 160A (Tc) | 3.1mOhm @ 75A, 10V | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | HEXFET® |
| IRF3704ZSTRLPBF | MOSFET N-CH 20V 67A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 20V | 67A (Tc) | 7.9mOhm @ 21A, 10V | 4.5V, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | ±20V | HEXFET® |
| IRFS31N20DPBF | MOSFET N-CH 200V 31A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.1W (Ta), 200W (Tc) | 200V | 31A (Tc) | 82mOhm @ 18A, 10V | 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | ±30V | HEXFET® |
| IRF8010SPBF | MOSFET N-CH 100V 80A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 260W (Tc) | 100V | 80A (Tc) | 15mOhm @ 45A, 10V | 10V | 4V @ 250µA | 120nC @ 10V | 3830pF @ 25V | ±20V | HEXFET® |
| IRFS3207PBF | MOSFET N-CH 75V 170A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 75V | 170A (Tc) | 4.5mOhm @ 75A, 10V | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | HEXFET® |
| IRF1503STRLPBF | MOSFET N-CH 30V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 30V | 75A (Tc) | 3.3mOhm @ 140A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 5730pF @ 25V | ±20V | HEXFET® |
| AUIRFS3206 | MOSFET N-CH 60V 210A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 60V | 120A (Tc) | 3mOhm @ 75A, 10V | 10V | 4V @ 150µA | 170nC @ 10V | 6540pF @ 50V | ±20V | HEXFET® |
| IRL1104S | MOSFET N-CH 40V 104A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.4W (Ta), 167W (Tc) | 40V | 104A (Tc) | 8mOhm @ 62A, 10V | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | HEXFET® |
| AUIRFZ44ZSTRL | MOSFET N-CH 55V 51A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 80W (Tc) | 55V | 51A (Tc) | 13.9mOhm @ 31A, 10V | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | HEXFET® |
| IRL1104STRLPBF | MOSFET N-CH 40V 104A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 2.4W (Ta), 167W (Tc) | 40V | 104A (Tc) | 8mOhm @ 62A, 10V | 4.5V, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | ±16V | HEXFET® |
| IRL3103D2STRL | MOSFET N-CH 30V 54A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | N-Channel | 30V | 54A (Tc) | 14mOhm @ 32A, 10V | 4.5V, 10V | 44nC @ 4.5V | 2300pF @ 25V | ±16V | FETKY™ |
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