-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF3315SPBF | MOSFET N-CH 150V 21A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 94W (Tc) | 150V | 21A (Tc) | 82mOhm @ 12A, 10V | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | HEXFET® |
| IRF3706STRLPBF | MOSFET N-CH 20V 77A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 88W (Tc) | 20V | 77A (Tc) | 8.5mOhm @ 15A, 10V | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | HEXFET® |
| IRF3205ZSTRLPBF | MOSFET N-CH 55V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 170W (Tc) | 55V | 75A (Tc) | 6.5mOhm @ 66A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | ±20V | HEXFET® |
| IRF3707ZS | MOSFET N-CH 30V 59A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 57W (Tc) | 30V | 59A (Tc) | 9.5mOhm @ 21A, 10V | 4.5V, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | ±20V | HEXFET® |
| IRF3706SPBF | MOSFET N-CH 20V 77A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 88W (Tc) | 20V | 77A (Tc) | 8.5mOhm @ 15A, 10V | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | HEXFET® |
| AUIRFS4115TRL | MOSFET N-CH 150V 99A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 150V | 99A (Tc) | 12.1mOhm @ 62A, 10V | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | HEXFET® |
| IRFS4310TRLPBF | MOSFET N-CH 100V 130A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 100V | 130A (Tc) | 7mOhm @ 75A, 10V | 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | ±20V | HEXFET® |
| IRFS3307TRLPBF | MOSFET N-CH 75V 120A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 75V | 120A (Tc) | 6.3mOhm @ 75A, 10V | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | HEXFET® |
| IRL3303D1S | MOSFET N-CH 30V 38A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 38A (Tc) | 26mOhm @ 20A, 10V | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | HEXFET® |
| IRFS31N20DTRL | MOSFET N-CH 200V 31A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.1W (Ta), 200W (Tc) | 200V | 31A (Tc) | 82mOhm @ 18A, 10V | 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | ±30V | HEXFET® |
| IRFZ46ZSTRLPBF | MOSFET N-CH 55V 51A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 82W (Tc) | 55V | 51A (Tc) | 13.6mOhm @ 31A, 10V | 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | ±20V | HEXFET® |
| IRFS4020TRLPBF | MOSFET N-CH 200V 18A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 100W (Tc) | 200V | 18A (Tc) | 105mOhm @ 11A, 10V | 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | ±20V | |
| AUIRFS3006-7P | MOSFET N-CH 60V 293A D2PAK-7P | Infineon Technologies | D2PAK | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 60V | 240A (Tc) | 2.1mOhm @ 168A, 10V | 10V | 4V @ 250µA | 300nC @ 10V | 8850pF @ 50V | ±20V | HEXFET® |
| AUIRFZ44VZS | MOSFET N-CH 60V 57A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 92W (Tc) | 60V | 57A (Tc) | 12mOhm @ 34A, 10V | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | HEXFET® |
| IRL540NSTRR | MOSFET N-CH 100V 36A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 140W (Tc) | 100V | 36A (Tc) | 44mOhm @ 18A, 10V | 4V, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | ±16V | HEXFET® |
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