-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS33N15DTRLP | MOSFET N-CH 150V 33A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 170W (Tc) | 150V | 33A (Tc) | 56mOhm @ 20A, 10V | 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | ±30V | HEXFET® |
| IRFZ46NS | MOSFET N-CH 55V 53A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 107W (Tc) | 55V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | HEXFET® |
| IRL3302STRL | MOSFET N-CH 20V 39A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 57W (Tc) | 20V | 39A (Tc) | 20mOhm @ 23A, 7V | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | HEXFET® |
| IRFZ48VSTRLPBF | MOSFET N-CH 60V 72A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 60V | 72A (Tc) | 12mOhm @ 43A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | ±20V | HEXFET® |
| IRL1004SPBF | MOSFET N-CH 40V 130A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 40V | 130A (Tc) | 6.5mOhm @ 78A, 10V | 4.5V, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | ±16V | HEXFET® |
| IRF1407STRLPBF | MOSFET N-CH 75V 100A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 75V | 100A (Tc) | 7.8mOhm @ 78A, 10V | 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | ±20V | HEXFET® |
| IRFZ34NSTRLPBF | MOSFET N-CH 55V 29A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 68W (Tc) | 55V | 29A (Tc) | 40mOhm @ 16A, 10V | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | HEXFET® |
| IRF2807ZS | MOSFET N-CH 75V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 170W (Tc) | 75V | 75A (Tc) | 9.4mOhm @ 53A, 10V | 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | ±20V | HEXFET® |
| IRL3402SPBF | MOSFET N-CH 20V 85A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 110W (Tc) | 20V | 85A (Tc) | 8mOhm @ 51A, 7V | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | HEXFET® |
| IRF3709STRR | MOSFET N-CH 30V 90A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta), 120W (Tc) | 30V | 90A (Tc) | 9mOhm @ 15A, 10V | 4.5V, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | ±20V | HEXFET® |
| IRF2804STRRPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 40V | 75A (Tc) | 2mOhm @ 75A, 10V | 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | ±20V | HEXFET® |
| IRF1324STRLPBF | MOSFET N-CH 24V 195A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 24V | 195A (Tc) | 1.65mOhm @ 195A, 10V | 10V | 4V @ 250µA | 240nC @ 10V | 7590pF @ 24V | ±20V | HEXFET® |
| IRL1404SPBF | MOSFET N-CH 40V 160A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 40V | 160A (Tc) | 4mOhm @ 95A, 10V | 4.3V, 10V | 3V @ 250µA | 140nC @ 5V | 6600pF @ 25V | ±20V | HEXFET® |
| IRFS3806PBF | MOSFET N-CH 60V 43A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 60V | 43A (Tc) | 15.8mOhm @ 25A, 10V | 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | ±20V | HEXFET® |
| IRF5305SPBF | MOSFET P-CH 55V 31A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 110W (Tc) | 55V | 31A (Tc) | 60mOhm @ 16A, 10V | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | HEXFET® |
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