• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 59
  • IRF7707TRPBF
    MOSFET P-CH 20V 7A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRF7754GTRPBF
    MOSFET 2P-CH 12V 5.5A 8TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
    • Power - Max: 1W
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  • IRF7704GTRPBF
    MOSFET P-CH 40V 4.6A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7754
    MOSFET 2P-CH 12V 5.5A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
    • Power - Max: 1W
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  • IRF7705TRPBF
    MOSFET P-CH 30V 8A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7751TR
    MOSFET 2P-CH 30V 4.5A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
    • Power - Max: 1W
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  • IRF7754TRPBF
    MOSFET 2P-CH 12V 5.5A 8TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 5.5A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
    • Vgs(th) (Max) @ Id: 900mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
    • Power - Max: 1W
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  • IRF7702
    MOSFET P-CH 12V 8A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
    • Vgs (Max): ±8V
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  • IRF7700TR
    MOSFET P-CH 20V 8.6A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRF7751
    MOSFET 2P-CH 30V 4.5A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
    • Power - Max: 1W
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  • IRF7706TRPBF
    MOSFET P-CH 30V 7A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.51W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7750
    MOSFET 2P-CH 20V 4.7A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 4.7A
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
    • Power - Max: 1W
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  • IRF7703GTRPBF
    MOSFET P-CH 40V 6A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7752GTRPBF
    MOSFET 2N-CH 30V 4.6A 8TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.6A
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
    • Power - Max: 1W
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  • IRF7751GTRPBF
    MOSFET 2P-CH 30V 4.5A 8TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.5A
    • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
    • Power - Max: 1W
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