• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 83
  • IRLH7134TR2PBF
    MOSFET N-CH 40V 26A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • AUIRFN8458TRXTMA1
    MOSFET_(20V 40V) DUAL PQFN 5X6 8
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
    • Power - Max: 34W (Tc)
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  • IRFH7004TRPBF
    MOSFET N CH 40V 100A PQFN 5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-VQFN Exposed Pad
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6419pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRFH6200TRPBF
    MOSFET N-CH 20V 49A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 1.1V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
    • Vgs (Max): ±12V
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  • IRFH5106TR2PBF
    MOSFET N-CH 60V 100A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5207TR2PBF
    MOSFET N-CH 75V 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH4226TRPBF
    MOSFET N-CH 25V 70A PQFN 5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 13V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5300TRPBF
    MOSFET N-CH 30V 40A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRFH5406TRPBF
    MOSFET N-CH 60V 40A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH5006TRPBF
    MOSFET N-CH 60V 100A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH5406TR2PBF
    MOSFET N-CH 60V 40A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH7440TR2PBF
    MOSFET N-CH 40V 85A 8PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4574pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IRFH5015TRPBF
    MOSFET N-CH 150V 10A 8VQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRLH5036TRPBF
    MOSFET N-CH 60V 100A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IRFH5025TR2PBF
    MOSFET N-CH 250V 3.8A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 50V
    • Technology: MOSFET (Metal Oxide)
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